6
RF Device Data
Freescale Semiconductor
MRFG35020AR1
TYPICAL CHARACTERISTICS
42
2
14
0
60
Pout, OUTPUT POWER (dBm)
Figure 5. Single--Channel W--CDMA Power Gain
and Drain Efficiency versus Output Power
24
10
8
6
4
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
26 3028
12
Gps
42
-- 5 0
00
Pout, OUTPUT POWER (dBm)
Figure 6. Single--Channel W--CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
-- 2 0
-- 3 0
-- 4 0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
24 26 3028
-- 1 0
VDS=12Vdc,IDQ
= 300 mA, f = 3500 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IRL
ACPR
4
16
20
32
f, FREQUENCY (MHz)
Figure 7. Single--Channel W--CDMA Power Gain
and Drain Efficiency versus Frequency
3400
12
10
8
6
30
26
24
22
η
D
,
DRAIN EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
14
Gps
28
3450 3500 3550 3600
NOTE:Data is generated from the test circuit shown.
VDS=12Vdc,IDQ
= 300 mA, f = 3500 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
32 36 38 4034
40
32 3034
36 38
VDS=12Vdc,IDQ
= 300 mA, Pout=33dBm
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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